Starting Over: gm/Id-Based MOSFET Modeling as a Basis for Modernized Analog Design Methodologies

1 Gilgamesh Associates, Fletcher, Vermont, USA; [email protected]. 2 University of North Carolina/Charlotte, Charlotte, North Carolina, USA; [email protected]. 3 National Technological University of Athens, Zagraphou, Athens, Greece; [email protected]. Abstract – A method of interpreting MOSFET behavior is described which is more coherent for modern analog CMOS circuit design. This method supercedes the use of simple but antiquated equations in design, and replaces them with an approach based on the inversion coefficient of the individual transistors in the design. Measurements and modeling confirm that this method can be used directly to arbitrate among the various countervailing requirements of demanding analog designs.